Achieving light control of ultrafast electron dynamics in matter is of utmost importance for technology and research [1]. Few-femtosecond (fs) light pulses can turn semiconductors into conductive states by injecting charge carriers from the valence (VB) to the conduction (CB) band, possibly realizing crucial milestones in quantum electronics such as ultrafast optical switches. Despite recent continuous efforts, light-initiated physical phenomena in realistic and technologically relevant semiconductors are not fully understood. © 2023 IEEE.

Light-Driven Attosecond Photoinjection in Germanium

Adamska Lyudmyla;Lamperti Alessio;Molle Alessandro;
2023

Abstract

Achieving light control of ultrafast electron dynamics in matter is of utmost importance for technology and research [1]. Few-femtosecond (fs) light pulses can turn semiconductors into conductive states by injecting charge carriers from the valence (VB) to the conduction (CB) band, possibly realizing crucial milestones in quantum electronics such as ultrafast optical switches. Despite recent continuous efforts, light-initiated physical phenomena in realistic and technologically relevant semiconductors are not fully understood. © 2023 IEEE.
2023
Istituto Nanoscienze - NANO
Germanium; Quantum theory
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/449771
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