Substitutional boron atoms in silicon experience an off-lattice displacement during ion-irradiation with energetic light ions at room temperature. The off-lattice displacement rate has been measured in a B-doped Si by channelling analyses using nuclear reaction (650 keV proton beam, B-11(p,alpha)Be-8). The normalized channeling yield chi of B increases with the ion fluence until it saturates at a value smaller than 1. This indicates that B is not totally displaced in a random site. The carrier concentration in layer, measured by Van Der Pauw and Hall effect techniques, decreases during irradiation until complete de-activation of B occurs. The comparison of electrical and structural analyses is consistent with the formation of small, not electrically active B complexes stable at room temperature in presence of an excess of point defects. (c) 2006 Elsevier B.V. All rights reserved.

Room-temperature B off-lattice displacement and electrical deactivation induced by H and He implantation

2006

Abstract

Substitutional boron atoms in silicon experience an off-lattice displacement during ion-irradiation with energetic light ions at room temperature. The off-lattice displacement rate has been measured in a B-doped Si by channelling analyses using nuclear reaction (650 keV proton beam, B-11(p,alpha)Be-8). The normalized channeling yield chi of B increases with the ion fluence until it saturates at a value smaller than 1. This indicates that B is not totally displaced in a random site. The carrier concentration in layer, measured by Van Der Pauw and Hall effect techniques, decreases during irradiation until complete de-activation of B occurs. The comparison of electrical and structural analyses is consistent with the formation of small, not electrically active B complexes stable at room temperature in presence of an excess of point defects. (c) 2006 Elsevier B.V. All rights reserved.
2006
INFM
ENHANCED DIFFUSION
DOPANT DIFFUSION
SILICON
BORON
SI
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/450429
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact