In this paper we initially present two CNTFET models: the first is already proposed by us and the second is the Stanford model, proposing a method to match the output characteristics and transconductance characteristics between these two models. Then we describe a compact noise model, used to simulate the performance of a NOT gate, in order to analyze how the noise sources constitute a significant limitation in the design of circuits based on CNTFET. All simulations are obtained using the programming language Verilog-A on the simulator Advanced Design System (ADS), highlighting the solutions proposed in order to use this software.

Implementation of Noise Effects on CNTFET-based NOT Gate in Verilog-A

Marani R;
2022

Abstract

In this paper we initially present two CNTFET models: the first is already proposed by us and the second is the Stanford model, proposing a method to match the output characteristics and transconductance characteristics between these two models. Then we describe a compact noise model, used to simulate the performance of a NOT gate, in order to analyze how the noise sources constitute a significant limitation in the design of circuits based on CNTFET. All simulations are obtained using the programming language Verilog-A on the simulator Advanced Design System (ADS), highlighting the solutions proposed in order to use this software.
2022
Inglese
11
6
http://www.scopus.com/record/display.url?eid=2-s2.0-85132535524&origin=inward
Advanced designs; Design systems; Noise effects; Noise models; Noise source; NOT gate; Output characteristics; Performance; Stanford; Verilog-A
1
info:eu-repo/semantics/article
262
Marani, R.; Perri, A. G.
01 Contributo su Rivista::01.01 Articolo in rivista
none
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/450575
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