In this paper, after a description of the techniques used to realize heterostructures, we present a comparative analysis of the properties of materials used, in order to identify those that best adapt to the different fields of application. At last we present, as an example, a simulation study of a TFET (Tunneling Field Effect Transistor) inverter, whose performances are compared with those of a typical MOS inverter.
COMPARATIVE ANALYSIS OF MATERIAL PROPERTIES FOR HETEROSTRUCTURES
2023
Abstract
In this paper, after a description of the techniques used to realize heterostructures, we present a comparative analysis of the properties of materials used, in order to identify those that best adapt to the different fields of application. At last we present, as an example, a simulation study of a TFET (Tunneling Field Effect Transistor) inverter, whose performances are compared with those of a typical MOS inverter.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
