The performances of the Shipley UVIII chemically amplified resist (a positive tone) for nanostructure fabrication in silicon have been investigated. We studied the resist profile behaviour for high aspect ratio structure (ratio exceeding 1:5) with resolution down to 60 nm. The resist slope was investigated as a function of resist thickness, e-beam diameter, nominal linewidth and the development condition. Undercut profiles have been exploited for the deposition of nanometer metal lines by a lift-off technique. The metal mask allows the dry-etching of nanostructures in silicon.
Study of nanometer resolution resist slope for the UVIII chemically amplified resist.
Gerardino A;Calarco R;
1999
Abstract
The performances of the Shipley UVIII chemically amplified resist (a positive tone) for nanostructure fabrication in silicon have been investigated. We studied the resist profile behaviour for high aspect ratio structure (ratio exceeding 1:5) with resolution down to 60 nm. The resist slope was investigated as a function of resist thickness, e-beam diameter, nominal linewidth and the development condition. Undercut profiles have been exploited for the deposition of nanometer metal lines by a lift-off technique. The metal mask allows the dry-etching of nanostructures in silicon.File in questo prodotto:
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