The phase transition from Ni2Si to NiSi transrotational structures was studied in terms of incubation (t(0)) and characteristic (tau) times, i.e. the time required to trigger the transformation and the time after which the volume fraction occupied by the NiSi phase (chi) increases by 60%. The authors combined the effective medium approximation and the Avrami-Johnson-Mehl models to relate the measured sheet resistance R-s versus time to chi(t) in the temperature range between 230 and 320 degrees C With this method, the nucleation barrier and the activation energies for NiSi growth were obtained, 0.5 and 0.93 eV, respectively, with the density of nucleation sites higher in thicker layers.

Nucleation and growth of NiSi from Ni2Si transrotational domains

Alberti A;La Magna A;
2007

Abstract

The phase transition from Ni2Si to NiSi transrotational structures was studied in terms of incubation (t(0)) and characteristic (tau) times, i.e. the time required to trigger the transformation and the time after which the volume fraction occupied by the NiSi phase (chi) increases by 60%. The authors combined the effective medium approximation and the Avrami-Johnson-Mehl models to relate the measured sheet resistance R-s versus time to chi(t) in the temperature range between 230 and 320 degrees C With this method, the nucleation barrier and the activation energies for NiSi growth were obtained, 0.5 and 0.93 eV, respectively, with the density of nucleation sites higher in thicker layers.
2007
Istituto per la Microelettronica e Microsistemi - IMM
PHASE-CHANGE
KINETICS
DIFFUSION
SILICIDE
FILM
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/45396
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