In this paper, we demonstrate the capability to establish spin-polarized currents in doped SrTiO3 (STO). The results are based on the study of charge and spin transport in STO layers doped by the reversible electromigration of oxygen atoms in resistive-switching La0.7Sr0.3MnO3/STO/Co vertical stacks. The formation of oxygen vacancies inside STO results in a metallic conductivity at temperatures <200-250 K, above which a transition to an insulatinglike behavior is detected. A detailed theoretical analysis shows that the behavior of the metallic phase in our samples corresponds to the well-known state of the thermodynamically doped STO featuring the so-called bad metal behavior. Thus, our findings introduce this class of unconventional materials as valuable candidates for innovative spintronic devices.

Spin injection in the doped bad metal SrTiO3

Graziosi Patrizio
Primo
;
Bergenti Ilaria
Secondo
;
Riminucci Alberto;Borgatti Francesco;Vinai Giovanni;Torelli Piero;Panaccione Giancarlo;Dediu Valentin
Ultimo
2023

Abstract

In this paper, we demonstrate the capability to establish spin-polarized currents in doped SrTiO3 (STO). The results are based on the study of charge and spin transport in STO layers doped by the reversible electromigration of oxygen atoms in resistive-switching La0.7Sr0.3MnO3/STO/Co vertical stacks. The formation of oxygen vacancies inside STO results in a metallic conductivity at temperatures <200-250 K, above which a transition to an insulatinglike behavior is detected. A detailed theoretical analysis shows that the behavior of the metallic phase in our samples corresponds to the well-known state of the thermodynamically doped STO featuring the so-called bad metal behavior. Thus, our findings introduce this class of unconventional materials as valuable candidates for innovative spintronic devices.
2023
Istituto per lo Studio dei Materiali Nanostrutturati - ISMN
Istituto Officina dei Materiali - IOM -
Inglese
5
3
033906-1
033906-11
11
https://doi.org/10.1103/PhysRevResearch.5.033096
Esperti anonimi
OXIDE
RESISTIVITY; TRANSPORT
Internazionale
14
info:eu-repo/semantics/article
262
Graziosi, Patrizio; Bergenti, Ilaria; Vistoli, Lorenzo; Galassi, Fabio; Calbucci, Marco; Riminucci, Alberto; Borgatti, Francesco; MacLaren Donald, A.;...espandi
01 Contributo su Rivista::01.01 Articolo in rivista
open
   Interfacing Oxides
   IFOX
   FP7
   246102

   Gated INTERfaces for FAST information processing
   INTERFAST
   H2020
   965046
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/455115
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