We describe a direct method to obtain a quantitative evaluation of the In variation across nanometer-sized InGaAs quantum dots embedded in a GaAs matrix, by means of electron energy-loss spectroscopy in a scanning transmission electron microscope.
Direct quantitative measurement of compositional enrichment and variations in InyGa1-yAs quantum dots
Catalano M;Passaseo A
2001
Abstract
We describe a direct method to obtain a quantitative evaluation of the In variation across nanometer-sized InGaAs quantum dots embedded in a GaAs matrix, by means of electron energy-loss spectroscopy in a scanning transmission electron microscope.File in questo prodotto:
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