In this work we analyze the noise properties of the current at the hard-breakdown of a 6 nm thick oxide in an MOS structure. It is shown that in the quantum point contact case single fluctuators, probably consisting of electron traps inside the oxide, can be resolved, whereas the current noise at the thermal breakdown presents a 1/f spectrum, due to the averaging process between many of these fluctuators.
Current noise at the oxide hard-breakdown
Lombardo S
2001
Abstract
In this work we analyze the noise properties of the current at the hard-breakdown of a 6 nm thick oxide in an MOS structure. It is shown that in the quantum point contact case single fluctuators, probably consisting of electron traps inside the oxide, can be resolved, whereas the current noise at the thermal breakdown presents a 1/f spectrum, due to the averaging process between many of these fluctuators.File in questo prodotto:
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