The characteristics of Si nanocrystals (nc) and Er-doped Si nc embedded within Si/SiO2 Fabry-Perot microcavities are investigated. It is shown that very narrow (Delta lambda similar to 1.5 nm) and intense luminescence peaks can be obtained within the 600-1000 nm wavelength range for Si nc and at around 1.54 mum for Er-doped Si nc by properly varying the cavity resonance. The luminescence intensity of the on-axis emission is over an order of magnitude above that of similar samples without a cavity and the overall luminescence is confined within a 30 degrees cone from the sample normal. The properties of these cavities are presented and the implications of the results discussed.

Silicon nanocrystals and Er3+ ions in an optical microcavity

F Iacona;
2001

Abstract

The characteristics of Si nanocrystals (nc) and Er-doped Si nc embedded within Si/SiO2 Fabry-Perot microcavities are investigated. It is shown that very narrow (Delta lambda similar to 1.5 nm) and intense luminescence peaks can be obtained within the 600-1000 nm wavelength range for Si nc and at around 1.54 mum for Er-doped Si nc by properly varying the cavity resonance. The luminescence intensity of the on-axis emission is over an order of magnitude above that of similar samples without a cavity and the overall luminescence is confined within a 30 degrees cone from the sample normal. The properties of these cavities are presented and the implications of the results discussed.
2001
Istituto per la Microelettronica e Microsistemi - IMM
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/45572
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