AbstractWe report on the synthesis of 2D GaN materials by the so-called liquid metal chemistry and tuning of their composition between oxide and nitride materials. This technique promises easier integration of 2D materials onto photonic devices compared to traditional "top-down" and "bottom-up" methods. Our fabrication method is carried out via a two-step liquid metal-based printing method followed by a microwave plasma-enhanced nitridation reaction. The synthesis of GaN relies on plasma-treated liquid metal-derived two-dimensional (2D) sheets that were squeeze-transferred onto desired substrates. We characterized the composition and optical properties of the resulting nm-thick GaN films using AFM, XPS, and ellipsometry measurements. Finally, the optical indices measured by ellipsometry are compared with theoretical results obtained by density functional theory (DFT). Our results represent a first step toward integrating 2D materials and semiconductors into electronics and optical devices. © 2023 SPIE.

Liquid metal fabrication of ultrathin Ga2O3 and GaN layers for integrated optics

Slassi Amine;Calzolari Arrigo;
2023

Abstract

AbstractWe report on the synthesis of 2D GaN materials by the so-called liquid metal chemistry and tuning of their composition between oxide and nitride materials. This technique promises easier integration of 2D materials onto photonic devices compared to traditional "top-down" and "bottom-up" methods. Our fabrication method is carried out via a two-step liquid metal-based printing method followed by a microwave plasma-enhanced nitridation reaction. The synthesis of GaN relies on plasma-treated liquid metal-derived two-dimensional (2D) sheets that were squeeze-transferred onto desired substrates. We characterized the composition and optical properties of the resulting nm-thick GaN films using AFM, XPS, and ellipsometry measurements. Finally, the optical indices measured by ellipsometry are compared with theoretical results obtained by density functional theory (DFT). Our results represent a first step toward integrating 2D materials and semiconductors into electronics and optical devices. © 2023 SPIE.
2023
Istituto Nanoscienze - NANO
Istituto Nanoscienze - NANO - Sede Secondaria Modena
Inglese
2D Photonic Materials and Devices VI
Contributo
Proceedings of SPIE - The International Society for Optical Engineering
12423
1242309
1242309
7
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/12423/2659145/Liquid-metal-fabrication-of-ultrathin-Ga2O3-and-GaN-layers-for/10.1117/12.2659145.short?SSO=1
SPIE
Esperti anonimi
31 January 2023through 2 February 2023
Aluminum nitride; Density functional theory; Ellipsometry; Fabrication; Gallium nitride; III-V semiconductors; Integrated optics; Liquid metals; Photonic devices; Polarization; Wide band gap semiconductors
Elettronico
14
restricted
Pedram, Panteha; Zavabeti, Ali; Syed, Nitu; Slassi, Amine; Nguyen Chung, Kim; Fornacciari, Benjamin; Lamirand, Anne; Galipaud, Jules; Calzolari, Arrig...espandi
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/456816
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