We studied the temperature dependent transport properties and memory behaviour of ultrathin black phosphorus field-effect transistors. The devices show electrical conductance and field-effect mobility that decreases with the rising temperature. The field effect mobility, which depends also on the gate voltage sweep range, is 283 cm2V-1s-1 at 150 K and reduces to 33 cm2V-1s-1 at 340 K, when the voltage gate sweep range is ± 50 V. The transfer characteristics show a hysteresis width that increases with the temperature and is exploited to enable non-volatile memories with a wider programming window at higher temperatures. © 2023 The Author(s). Published by IOP Publishing Ltd.
Temperature dependent black phosphorus transistor and memory
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2023
Abstract
We studied the temperature dependent transport properties and memory behaviour of ultrathin black phosphorus field-effect transistors. The devices show electrical conductance and field-effect mobility that decreases with the rising temperature. The field effect mobility, which depends also on the gate voltage sweep range, is 283 cm2V-1s-1 at 150 K and reduces to 33 cm2V-1s-1 at 340 K, when the voltage gate sweep range is ± 50 V. The transfer characteristics show a hysteresis width that increases with the temperature and is exploited to enable non-volatile memories with a wider programming window at higher temperatures. © 2023 The Author(s). Published by IOP Publishing Ltd.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
