We present a theoretical study of the lattice deformation of semiconductor epitaxial layers grown on arbitrarily oriented substrates, both with cubic symmetry. We assume a coherent (pseudomorphic) interface between the epitaxial layer and the substrate, i.e., without defects and dislocations. The elastic strain tensor components are calculated by minimization of the strain-energy density. A detailed study of the tetragonal deformation and of the shear strain is presented. We obtained no shear strain for the high-symmetry surfaces [001], [110], and [111], while for all the other surface orientations, which do not even have twofold symmetry, a shear strain was obtained with the highest value for the [113] surface. The shear strain has the opposite sign for [kk1] surfaces with respect to [11k] surfaces. In addition, the shear displacement occurs in all cases normal to the direction of highest symmetry of the interface plane.
ELASTIC LATTICE DEFORMATION OF SEMICONDUCTOR HETEROSTRUCTURES GROWN ON ARBITRARILY ORIENTED SUBSTRATE SURFACES
DE CARO L;
1993
Abstract
We present a theoretical study of the lattice deformation of semiconductor epitaxial layers grown on arbitrarily oriented substrates, both with cubic symmetry. We assume a coherent (pseudomorphic) interface between the epitaxial layer and the substrate, i.e., without defects and dislocations. The elastic strain tensor components are calculated by minimization of the strain-energy density. A detailed study of the tetragonal deformation and of the shear strain is presented. We obtained no shear strain for the high-symmetry surfaces [001], [110], and [111], while for all the other surface orientations, which do not even have twofold symmetry, a shear strain was obtained with the highest value for the [113] surface. The shear strain has the opposite sign for [kk1] surfaces with respect to [11k] surfaces. In addition, the shear displacement occurs in all cases normal to the direction of highest symmetry of the interface plane.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
