We report on the fabrication of micrometric regular metallic arrays obtained by using, as a template, a polymeric membrane with regular pores. The membranes were prepared by embedding hydrophobized silica colloids into a polymer layer and subsequently removing them. We have investigated the electronic transport properties of the metallic arrays as a function of the applied electric field and temperature. Simple current voltage (IV) characteristics present a strong switching behavior with I-ON/I-OFF ratios up to 10(4). Different temperature dependences of the resistance in the different ranges of the applied electric field have been observed. Finally, the performances of a field effect device ( FET), with the conducting channel and insulating layer consisting of a Gold dot array and a STO substrate, respectively, have been investigated. The channel resistivity has been modified at least of two orders of magnitude and a mobility of about 2 cm(2)/V* s has been extracted by the analysis of the FET transfer curve.

Electrical properties of micrometric metallic dots obtained by porous polymeric membranes

Barra M;Cassinese A;Chiarella F;
2005

Abstract

We report on the fabrication of micrometric regular metallic arrays obtained by using, as a template, a polymeric membrane with regular pores. The membranes were prepared by embedding hydrophobized silica colloids into a polymer layer and subsequently removing them. We have investigated the electronic transport properties of the metallic arrays as a function of the applied electric field and temperature. Simple current voltage (IV) characteristics present a strong switching behavior with I-ON/I-OFF ratios up to 10(4). Different temperature dependences of the resistance in the different ranges of the applied electric field have been observed. Finally, the performances of a field effect device ( FET), with the conducting channel and insulating layer consisting of a Gold dot array and a STO substrate, respectively, have been investigated. The channel resistivity has been modified at least of two orders of magnitude and a mobility of about 2 cm(2)/V* s has been extracted by the analysis of the FET transfer curve.
2005
Istituto Superconduttori, materiali innovativi e dispositivi - SPIN
micrometric metallic dots
porous polymeric membranes
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/462517
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact