In this paper we show that single-photon avalanche detectors (SPADs) may have a strong potential as very sensitive on-wafer tools for Lifetime monitoring, given their simple fabrication process and their straightforward use in the measurements. We have fabricated Si SPADs with n(+)-p structures and we show that dark counting has a simple exponential dependence on time, thus making it possible to extract a single lifetime parameter.
Silicon p-n junctions biased above breakdown used as monitors of carrier lifetime
Lombardo S;
2001
Abstract
In this paper we show that single-photon avalanche detectors (SPADs) may have a strong potential as very sensitive on-wafer tools for Lifetime monitoring, given their simple fabrication process and their straightforward use in the measurements. We have fabricated Si SPADs with n(+)-p structures and we show that dark counting has a simple exponential dependence on time, thus making it possible to extract a single lifetime parameter.File in questo prodotto:
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