The formation of radiation defects in Sn-doped Float-Zone (FZ) and Czochralski (Cz) n-type silicon after a high-energy proton irradiation is studied by a combination of Deep Level Transient Spectroscopy (DLTS) and Photoluminescence (PL). Besides the Sn-V levels, evidence is found for at least three new Sn-related radiation defects, two electron traps close to the conduction band and one hole trap close to the valence band. No new PL lines have been identified so far in Sn-doped material. It is furthermore concluded that the Sn-related radiation defects do not show pronounced recombination activity, in the concentration range studied.
High-energy proton radiation induced defects in tin-doped n-type silicon
Privitera V;
2001
Abstract
The formation of radiation defects in Sn-doped Float-Zone (FZ) and Czochralski (Cz) n-type silicon after a high-energy proton irradiation is studied by a combination of Deep Level Transient Spectroscopy (DLTS) and Photoluminescence (PL). Besides the Sn-V levels, evidence is found for at least three new Sn-related radiation defects, two electron traps close to the conduction band and one hole trap close to the valence band. No new PL lines have been identified so far in Sn-doped material. It is furthermore concluded that the Sn-related radiation defects do not show pronounced recombination activity, in the concentration range studied.File in questo prodotto:
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