Abstract: Electro optical absorption in hydrogenated amorphous silicon (?- Si:H) - amorphous silicon carbonitride (?-SiCxNy) multilayers have been studied in two different planar multistacks waveguides. The waveguides were realized by plasma enhanced chemical vapour deposition (PECVD), a technology compatible with the standard microelectronic processes. Light absorption is induced at ? = 1.55 ?m through the application of an electric field which induces free carrier accumulation across the multiple insulator/ semiconductor device structure. The experimental performances have been compared to those obtained through calculations using combined twodimensional (2-D) optical and electrical simulations.
Electro-optically induced absorption in ±-Si:H/±-SiCN waveguiding multistacks
Summonte C
2008
Abstract
Abstract: Electro optical absorption in hydrogenated amorphous silicon (?- Si:H) - amorphous silicon carbonitride (?-SiCxNy) multilayers have been studied in two different planar multistacks waveguides. The waveguides were realized by plasma enhanced chemical vapour deposition (PECVD), a technology compatible with the standard microelectronic processes. Light absorption is induced at ? = 1.55 ?m through the application of an electric field which induces free carrier accumulation across the multiple insulator/ semiconductor device structure. The experimental performances have been compared to those obtained through calculations using combined twodimensional (2-D) optical and electrical simulations.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
