Interfaces between different media represent the most common structure in composite and complex materials, e.g., with applications in microelectronics and photovoltaics. We analyze the elastic properties of the a-Si/c-Si interface, which involves two completely different atomic structures. We prove that the continuum approach and the atomistic simulation are consistent if atomic-scale elastic fields are properly averaged.
Interfacial elastic properties between a-Si and c-Si
Colombo L
2008
Abstract
Interfaces between different media represent the most common structure in composite and complex materials, e.g., with applications in microelectronics and photovoltaics. We analyze the elastic properties of the a-Si/c-Si interface, which involves two completely different atomic structures. We prove that the continuum approach and the atomistic simulation are consistent if atomic-scale elastic fields are properly averaged.File in questo prodotto:
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