One-and two-dimensional detector arrays were realized on 270 μm thick 10×10 mm2 CVD-diamond samples. The high resistivity value of diamond specimens in the dark allowed the realization of pixel-detectors based on a sandwich contact structure able to work in a photoconductive mode. Each pixel photocurrent was conditioned by a dedicated readout electronics composed by a high sensitive integrator and a Σ-Δ ADC converter. The overall 500 μs conversion time afforded a data acquisition rate up to 2 kSPS. The fast photoresponse of the diamond specimen in the nanosecond time regime allowed to use the proposed device for excimer-laser beam diagnostics. Moreover, the diamond solar-blindness would guarantee high performance of devices as UV beam profile meters also under high intensity background illumination. © 2008 IEEE.

CVD-diamond detectors for real-time beam profile measurements

Girolami M.;Allegrini P.;Conte G.;
2008

Abstract

One-and two-dimensional detector arrays were realized on 270 μm thick 10×10 mm2 CVD-diamond samples. The high resistivity value of diamond specimens in the dark allowed the realization of pixel-detectors based on a sandwich contact structure able to work in a photoconductive mode. Each pixel photocurrent was conditioned by a dedicated readout electronics composed by a high sensitive integrator and a Σ-Δ ADC converter. The overall 500 μs conversion time afforded a data acquisition rate up to 2 kSPS. The fast photoresponse of the diamond specimen in the nanosecond time regime allowed to use the proposed device for excimer-laser beam diagnostics. Moreover, the diamond solar-blindness would guarantee high performance of devices as UV beam profile meters also under high intensity background illumination. © 2008 IEEE.
2008
Istituto di Struttura della Materia - ISM - Sede Secondaria Montelibretti
978-1-4244-2580-8
Diamond, UV detectors, Wide-bandgap semiconductors
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/465823
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