The quantum conductance of the paradigmatic quasi-one-dimensional In/Si(111) surface system is calculated for 4 x 1, 4 x 2 and 8 x 2 surface reconstructions. In agreement with experiment, we find the recently suggested formation of hexagons within the In nanowires [C. Gonzalez, F. Flores, J. Ortega, Phys. Rev. Lett. 96 (2006) 136101] to drastically modify the electron transport along the In chains. In contrast, the formation of trimers barely changes the quantum conductance.

Quantum conductance of In nanowires on Si(111) from first principles calculations

A Calzolari;
2007

Abstract

The quantum conductance of the paradigmatic quasi-one-dimensional In/Si(111) surface system is calculated for 4 x 1, 4 x 2 and 8 x 2 surface reconstructions. In agreement with experiment, we find the recently suggested formation of hexagons within the In nanowires [C. Gonzalez, F. Flores, J. Ortega, Phys. Rev. Lett. 96 (2006) 136101] to drastically modify the electron transport along the In chains. In contrast, the formation of trimers barely changes the quantum conductance.
2007
INFM
Inglese
601
18
4045
4047
3
Sì, ma tipo non specificato
In nanowires
silicon surface
density functional calculations
electron transport
1
info:eu-repo/semantics/article
262
S. Wippermann; G.W. Schmidt; A. Calzolari; M. B. Nardelli; A. A. Stekolnikov; K. Seino; F. Bechstedt
01 Contributo su Rivista::01.01 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/4683
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