Nowadays the interest in deep space exploration is very strong; however, powering devices where sunlight is unavailable is a challenging task. Conventional radioisotope thermoelectric generators are difficult to miniaturize, while low-energy particle voltaic devices lack sufficient power density. In this study, we experimentally investigated the use of state-of-the-art 5 × 5 mm2 silicon pad radiation detectors operated at cryogenic temperatures as high-energy particle voltaic devices. Our results show that operating the detectors at 80 K with 241Am (0.1 mCi) and 90Sr- 90Y (0.8 mCi) radioactive sources results in a maximum electrical power of 100 nW/ cm2 and 165 nW/cm2, respectively. These values correspond to 11% and 12% efficiency, which is unprecedented for silicon voltaic devices. Additionally, we found that the device’s radiation hardness significantly increases at cryogenic temperatures, consistent with the Lazarus effect. After more than 270 h of continuous irradiation with the 90Sr- 90Y source at 80 K, the device’s residual efficiency is as high as 1.8% and remains stable. This efficiency value could be increased by stacking multiple devices together, while passive radiative cooling in space allows reaching cryogenic temperatures without extra power.
Alpha and beta-voltaic silicon devices operated at cryogenic temperatures: An energy source for deep space exploration
Maurizio Casalino;Emiliano Di Gennaro
;Roberto RussoUltimo
2024
Abstract
Nowadays the interest in deep space exploration is very strong; however, powering devices where sunlight is unavailable is a challenging task. Conventional radioisotope thermoelectric generators are difficult to miniaturize, while low-energy particle voltaic devices lack sufficient power density. In this study, we experimentally investigated the use of state-of-the-art 5 × 5 mm2 silicon pad radiation detectors operated at cryogenic temperatures as high-energy particle voltaic devices. Our results show that operating the detectors at 80 K with 241Am (0.1 mCi) and 90Sr- 90Y (0.8 mCi) radioactive sources results in a maximum electrical power of 100 nW/ cm2 and 165 nW/cm2, respectively. These values correspond to 11% and 12% efficiency, which is unprecedented for silicon voltaic devices. Additionally, we found that the device’s radiation hardness significantly increases at cryogenic temperatures, consistent with the Lazarus effect. After more than 270 h of continuous irradiation with the 90Sr- 90Y source at 80 K, the device’s residual efficiency is as high as 1.8% and remains stable. This efficiency value could be increased by stacking multiple devices together, while passive radiative cooling in space allows reaching cryogenic temperatures without extra power.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.