Residual stresses in ceramic particle electroconductive composites were investigated by Raman microprobe spectroscopy and X-ray diffraction. The composites were ternary electroconductive ceramics in the system AlN+SiC+(ZrB2, MoSi2). Due to the poor definition of the reinforcing phase peaks, only the matrix residual stress could be evaluated by Raman spectroscopy, whilst the residual stress in the reinforcing phase was calculated by the equilibrium conditions. These calculated values were compared with those experimentally obtained by X-ray diffraction. The agreement between Raman and X-ray results was quite satisfactory. The values of residual stress calculated by the composite theory were in good agreement with those measured by Raman and X-ray diffraction for the MoSi2-containing composite. For the ZrB2-containing composite, the value calculated by the composite theory falls between the values measured by Raman and X-ray diffraction
Analysis of residual stresses in ternary electroconductive composites
Diletta Sciti;Stefano Guicciardi;Giancarlo Celotti;
2006
Abstract
Residual stresses in ceramic particle electroconductive composites were investigated by Raman microprobe spectroscopy and X-ray diffraction. The composites were ternary electroconductive ceramics in the system AlN+SiC+(ZrB2, MoSi2). Due to the poor definition of the reinforcing phase peaks, only the matrix residual stress could be evaluated by Raman spectroscopy, whilst the residual stress in the reinforcing phase was calculated by the equilibrium conditions. These calculated values were compared with those experimentally obtained by X-ray diffraction. The agreement between Raman and X-ray results was quite satisfactory. The values of residual stress calculated by the composite theory were in good agreement with those measured by Raman and X-ray diffraction for the MoSi2-containing composite. For the ZrB2-containing composite, the value calculated by the composite theory falls between the values measured by Raman and X-ray diffractionI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.