A multilayer composite was produced by the tape-casting technique in the AlN-SiC-MoSi2 system, coupling insulating and electrically conductive layers. The composite was highly dense and delamination-free. The values of residual stresses due to the coupling of layers of different composition were assessed using the indentation technique and Raman piezo-spectroscopy. The experimental techniques agreed in sign and magnitude of the residual stresses, revealing compression in the insulating layers and tension in the conductive layers. The experimental results were lower than the expected values calculated by lamination theory. The choice of the parameter values needed for the theoretical calculations appear to be critical from this point of view. In such ceramic systems, a sintering-derived stress can be present besides that due to lamination

Fabrication and residual stresses characterization of novel non-oxide multilayer ceramics

Diletta Sciti;Stefano Guicciardi
2006

Abstract

A multilayer composite was produced by the tape-casting technique in the AlN-SiC-MoSi2 system, coupling insulating and electrically conductive layers. The composite was highly dense and delamination-free. The values of residual stresses due to the coupling of layers of different composition were assessed using the indentation technique and Raman piezo-spectroscopy. The experimental techniques agreed in sign and magnitude of the residual stresses, revealing compression in the insulating layers and tension in the conductive layers. The experimental results were lower than the expected values calculated by lamination theory. The choice of the parameter values needed for the theoretical calculations appear to be critical from this point of view. In such ceramic systems, a sintering-derived stress can be present besides that due to lamination
2006
Istituto di Scienza, Tecnologia e Sostenibilità per lo Sviluppo dei Materiali Ceramici - ISSMC (ex ISTEC)
Composites; (Raman piezo-)spectroscopy; Mechanical properties; Tape casting; Laminates; AlN; SiC; MoSi2
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/47939
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