We trace the photodetection mechanisms at THz frequencies in InAs nanowire (NW) field-effect transistors (FET) by means of a combination of two near-field techniques: photocurrent nanoscopy and detectorless scattering near-field microscopy. By mapping local THz photocurrents with nanoscale (15 nm) spatial resolution we demonstrate the activation of photo-thermoelectric and bolometric effects under THz illumination of these room temperature nanodetectors.
Tracing photodetection of THz frequency light in InAs nanowire field effect transistors via near-field THz nanoscopy
Pogna E. A. A.
;Asgari M.;Zannier V.;Sorba L.;Viti L.;Vitiello M. S.
2020
Abstract
We trace the photodetection mechanisms at THz frequencies in InAs nanowire (NW) field-effect transistors (FET) by means of a combination of two near-field techniques: photocurrent nanoscopy and detectorless scattering near-field microscopy. By mapping local THz photocurrents with nanoscale (15 nm) spatial resolution we demonstrate the activation of photo-thermoelectric and bolometric effects under THz illumination of these room temperature nanodetectors.File in questo prodotto:
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