The light-induced injection of charge carriers from the valence to the conduction band of a solid, and their subsequent thermalization and relaxation, are fundamental physical processes. They allow dynamically altering the conductivity of a semiconductor, controlling its electro-optical properties with light fields. In this paper, we discuss the elusive photoinjection mechanism occurring during light-matter interaction, to then focus on the charge thermalization and relaxation processes in germanium.

Photoinduced charge carrier dynamics in germanium

L. Adamska;L. J. D’Onofrio;A. Lamperti;C. A. Rozzi;M. Nisoli;S. Pittalis;
2023

Abstract

The light-induced injection of charge carriers from the valence to the conduction band of a solid, and their subsequent thermalization and relaxation, are fundamental physical processes. They allow dynamically altering the conductivity of a semiconductor, controlling its electro-optical properties with light fields. In this paper, we discuss the elusive photoinjection mechanism occurring during light-matter interaction, to then focus on the charge thermalization and relaxation processes in germanium.
2023
Istituto Nanoscienze - NANO - Sede Secondaria Modena
Istituto Nanoscienze - NANO
Istituto per la Microelettronica e Microsistemi - IMM
Istituto Superconduttori, materiali innovativi e dispositivi - SPIN
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/481923
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