Our society largely relies on inorganic semiconductor devices which are, so far, fabricated using expensive and complex processes requiring ultra-high vacuum equipment. Here we report on the possibility of growing a p-n junction taking advantage of electrochemical processes based on the use of aqueous solutions. The growth of the junction has been carried out using the Electrochemical Atomic Layer Deposition (E-ALD) technique, which allowed to sequentially deposit two different semiconductors, CdS and Cu2S, on an Ag(111) substrate, in a single procedure. The growth process was monitored in situ by Surface X-Ray Diffraction (SXRD) and resulted in the fabrication of a thin double-layer structure with a high degree of crystallographic order and a well-defined interface. The high-performance electrical characteristics of the device were analysed ex-situ and show the characteristic feature of a diode.

On the Electrochemical Growth of a Crystalline p–n Junction From Aqueous Solutions

Felici, Roberto;Lavacchi, Alessandro;Berretti, Enrico;Montegrossi, Giordano;Poggini, Lorenzo;Russo, Francesca;Sportelli, Maria C.;Torsi, Luisa;Innocenti, Massimo
2024

Abstract

Our society largely relies on inorganic semiconductor devices which are, so far, fabricated using expensive and complex processes requiring ultra-high vacuum equipment. Here we report on the possibility of growing a p-n junction taking advantage of electrochemical processes based on the use of aqueous solutions. The growth of the junction has been carried out using the Electrochemical Atomic Layer Deposition (E-ALD) technique, which allowed to sequentially deposit two different semiconductors, CdS and Cu2S, on an Ag(111) substrate, in a single procedure. The growth process was monitored in situ by Surface X-Ray Diffraction (SXRD) and resulted in the fabrication of a thin double-layer structure with a high degree of crystallographic order and a well-defined interface. The high-performance electrical characteristics of the device were analysed ex-situ and show the characteristic feature of a diode.
2024
Istituto di Chimica dei Composti OrganoMetallici - ICCOM -
Istituto di Geoscienze e Georisorse - IGG - Sede Secondaria Firenze
Istituto Superconduttori, materiali innovativi e dispositivi - SPIN
Atomic layer deposition; Cadmium sulfide; Copper compounds; Semiconductor junctions; Silver compounds; Substrates; Atomic-layer deposition; Complex Processes; Deposition technique; Electrochemical growth; Electrochemical process; Electrochemicals; Growth process; Inorganic semiconductors; P-n junction; Process-based; II-VI semiconductors
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Descrizione: "This is the peer reviewed version of the following article: R. Felici, T. Baroni, F. Carlà, N. Cioffi, F. Di Benedetto, C. Fontanesi, A. Giaccherini, W. Giurlani, M. Gonidec, A. Lavacchi, E. Berretti, P. Marcantelli, G. Montegrossi, M. Bonechi, R. A. Picca, L. Poggini, F. Russo, M. C. Sportelli, L. Torsi, M. Innocenti, Chem. Eur. J. 2024, e202401403 which has been published in final form at https://doi.org/10.1002/chem.202401403. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited."
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/486081
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