We present the fabrication of suspended silicon nanowires using 1 mum resolution conventional photolithography, anisotropic wet etching and thermal oxidation. A minimum transverse dimension of about 50 nm was achieved in some of the wires. We characterized the wires from the electrical and noise points of view, comparing the behavior at room temperature and at 77 K, and discuss possible hypotheses to explain the observed differences.
Electrical and Noise Characterization of Suspended Silicon Wires
M Piotto
2002
Abstract
We present the fabrication of suspended silicon nanowires using 1 mum resolution conventional photolithography, anisotropic wet etching and thermal oxidation. A minimum transverse dimension of about 50 nm was achieved in some of the wires. We characterized the wires from the electrical and noise points of view, comparing the behavior at room temperature and at 77 K, and discuss possible hypotheses to explain the observed differences.File in questo prodotto:
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