In this work we have studied the structural, electrical and optical properties of MOS devices, where the dielectric layer consists of a SiOx (x < 2) thin film prepared by plasma enhanced chemical vapor deposition and implanted with rare earth ions. As deposited SiOx films were annealed at high temperature (> 1000 degreesC) to induce the separation of the Si and SiO2 phases with the formation of Si nanocrystals embedded in the insulating matrix. Devices based on this system present a strong light emission at room temperature at a wavelength of about 900 nm. Devices emitting at different wavelengths have been fabricated by implanting SiOx films with Er or Tin. Devices based on Er-doped Si nanoclusters film exhibit an intense 1.54 mum room temperature electroluminescence (EL). We have calculated the excitation cross-section for Er ions in presence of Si nanoclusters under electrical pumping and the value is similar to1 x 10(-14) cm(2), comparable to the value found for the electrical excitation of undoped Si nanocrystals. Finally, devices based on Tm-doped Si nanoclusters exhibit two EL peaks at 0.78 and 1.7 mum.
Electroluminescence properties of SiOx layers implanted with rare earth ions
Irrera A;Miritello M;Priolo F;Iacona F;
2004
Abstract
In this work we have studied the structural, electrical and optical properties of MOS devices, where the dielectric layer consists of a SiOx (x < 2) thin film prepared by plasma enhanced chemical vapor deposition and implanted with rare earth ions. As deposited SiOx films were annealed at high temperature (> 1000 degreesC) to induce the separation of the Si and SiO2 phases with the formation of Si nanocrystals embedded in the insulating matrix. Devices based on this system present a strong light emission at room temperature at a wavelength of about 900 nm. Devices emitting at different wavelengths have been fabricated by implanting SiOx films with Er or Tin. Devices based on Er-doped Si nanoclusters film exhibit an intense 1.54 mum room temperature electroluminescence (EL). We have calculated the excitation cross-section for Er ions in presence of Si nanoclusters under electrical pumping and the value is similar to1 x 10(-14) cm(2), comparable to the value found for the electrical excitation of undoped Si nanocrystals. Finally, devices based on Tm-doped Si nanoclusters exhibit two EL peaks at 0.78 and 1.7 mum.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.