Band-stop magnetostatic wave (MSW) resonators based on microstrip transducers realized on low-resistivity silicon (LRS) wafers and on micromachined silicon membranes have been studied. Frequency tunable MSW straight edge resonators made of Yttrium-iron-garnet film have been used as selective frequency components. The frequency tunability ranged between 5 and 7.5 GHz for bulk devices and between 3.5 and 9.5 GHz for the membrane supported ones, with better rejection and wider bandwidth with respect to the bulk configuration. From measurements of the transmission parameter suppression of more than 20 dB of high-order modes and a rejection ratio better than 20 dB for the membrane supported resonators have been obtained. As a result, the possibility to manufacture microwave, resonators characterized by high rejection. ratios on low-cost, LRS membranes is demonstrated.
Band-stop magnetostatic waves micromachined resonators
Marcelli R;
2004
Abstract
Band-stop magnetostatic wave (MSW) resonators based on microstrip transducers realized on low-resistivity silicon (LRS) wafers and on micromachined silicon membranes have been studied. Frequency tunable MSW straight edge resonators made of Yttrium-iron-garnet film have been used as selective frequency components. The frequency tunability ranged between 5 and 7.5 GHz for bulk devices and between 3.5 and 9.5 GHz for the membrane supported ones, with better rejection and wider bandwidth with respect to the bulk configuration. From measurements of the transmission parameter suppression of more than 20 dB of high-order modes and a rejection ratio better than 20 dB for the membrane supported resonators have been obtained. As a result, the possibility to manufacture microwave, resonators characterized by high rejection. ratios on low-cost, LRS membranes is demonstrated.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
