The aim of this work was the electrical characterization of biological molecules covalently immobilized on the dielectric of a MOS-like structure. The experimental protocol to bond the biological molecules on SiO2 lies in: oxide activation, silanization, linker molecule deposition, biological molecule bonding. Both an enzyme, the glucose oxidase (GOx), and single-stranded oligonucleotides (ssDNA) were selected as biological molecules. The effectiveness of the immobilization procedure was tested by X-ray Photoelectron spectroscopy. The electrical characterization was carried out on reference and fully processed samples as a function of the electrolyte pH, from 3 to 8, and of measurement time, up to 200 s. The oxide does not experience any aging during the measurement sets for voltages up to +/- 3 V. GOx deposition produces a shift of about -0.7 +/- 0.04 V in the V-FB, suggesting the molecule has a positive charge when anchored to the oxide layer. On the other hand, ssDNA deposition causes a positive shift, below 0.3 V, as expected due to the DNA negative charge in solution. The hybridization process causes a further shift in the VFB above 0.4 V, well above the experimental errors, confirming the sensitivity of this device to monitor the hybridization. Our preliminary data show a potential for the development of MOS-based biosensors.

Electrical Characterization of Biological Molecules Deposition in MOS Capacitors

Libertino S;
2008

Abstract

The aim of this work was the electrical characterization of biological molecules covalently immobilized on the dielectric of a MOS-like structure. The experimental protocol to bond the biological molecules on SiO2 lies in: oxide activation, silanization, linker molecule deposition, biological molecule bonding. Both an enzyme, the glucose oxidase (GOx), and single-stranded oligonucleotides (ssDNA) were selected as biological molecules. The effectiveness of the immobilization procedure was tested by X-ray Photoelectron spectroscopy. The electrical characterization was carried out on reference and fully processed samples as a function of the electrolyte pH, from 3 to 8, and of measurement time, up to 200 s. The oxide does not experience any aging during the measurement sets for voltages up to +/- 3 V. GOx deposition produces a shift of about -0.7 +/- 0.04 V in the V-FB, suggesting the molecule has a positive charge when anchored to the oxide layer. On the other hand, ssDNA deposition causes a positive shift, below 0.3 V, as expected due to the DNA negative charge in solution. The hybridization process causes a further shift in the VFB above 0.4 V, well above the experimental errors, confirming the sensitivity of this device to monitor the hybridization. Our preliminary data show a potential for the development of MOS-based biosensors.
2008
Istituto per la Microelettronica e Microsistemi - IMM
Mos Capacitors
Electrical Sensing
Glucose Oxidase
DNA
Silicon
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/49718
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