Electronic transport at the mu m length scale is theoretically investigated for N-doped and vacancy damaged graphene nanoribbons. In these systems, localization due to scattering is strongly energy dependent, and this fact leads to the appearance of conductance quasigaps in the spectral region of the resonance states. Conductance fluctuations are very large in the quasigap regions and increase linearly with the system size. The single parameters scaling hypothesis is not verified for energies in a zone including the charge neutrality point while it is valid for energies away from this zone.
Conductance distribution in doped and defected graphene nanoribbons
La Magna A;Deretzis I;
2009
Abstract
Electronic transport at the mu m length scale is theoretically investigated for N-doped and vacancy damaged graphene nanoribbons. In these systems, localization due to scattering is strongly energy dependent, and this fact leads to the appearance of conductance quasigaps in the spectral region of the resonance states. Conductance fluctuations are very large in the quasigap regions and increase linearly with the system size. The single parameters scaling hypothesis is not verified for energies in a zone including the charge neutrality point while it is valid for energies away from this zone.File in questo prodotto:
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