In this paper, we evaluate the potentiality of high-k materials (Al2O3, HfO2 and HfAlO) for interpoly application in non-volatile memories. A study of the leakage currents of high-k based capacitors allowed to discuss the retention performances at room and high temperatures of high-k interpoly dielectrics. High-k materials are then integrated as control dielectrics in silicon nanocrystal and SONOS (Si/SiO2/Si3N4/SiO2/Si) memories. The role of the high-k layer on the memory performances is discussed; a particular attention being devoted to the retention characteristics. Analytical models, combined with experimental results obtained on various structures allowed to analyze the mechanisms involved during retention.
Reliability of charge trapping memories with high-k control dielectrics (Invited Paper)
Bongiorno C;Lombardo S;
2009
Abstract
In this paper, we evaluate the potentiality of high-k materials (Al2O3, HfO2 and HfAlO) for interpoly application in non-volatile memories. A study of the leakage currents of high-k based capacitors allowed to discuss the retention performances at room and high temperatures of high-k interpoly dielectrics. High-k materials are then integrated as control dielectrics in silicon nanocrystal and SONOS (Si/SiO2/Si3N4/SiO2/Si) memories. The role of the high-k layer on the memory performances is discussed; a particular attention being devoted to the retention characteristics. Analytical models, combined with experimental results obtained on various structures allowed to analyze the mechanisms involved during retention.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
