We have fabricated bottom contact pentacene TFTs on flexible polyimide substrate and silicon substrate using different passivation layers in order to reduce the electrical instability of pentacene devices, induced by water diffusion in the film, as evidenced by electrical measurements under different environments. Experimental data show that parylene passivation layer does not introduce appreciable degradation of device characteristics and allows standard lithographic process, but it is not an effective barrier for water diffusion. The encapsulation of pentacene TFTs with an additional acryl layer does not reduce the device sensitivity to the water, whereas devices encapsulated by a parylene/acryl/aluminum triple layer do not show increase of transfer characteristics hysteresis when measured in air.

Pentacene TFTs with parylene passivation layer

Simeone D;Mariucci L;Rapisarda M;Minotti A;Pecora A;Maiolo L;Fortunato G
2009

Abstract

We have fabricated bottom contact pentacene TFTs on flexible polyimide substrate and silicon substrate using different passivation layers in order to reduce the electrical instability of pentacene devices, induced by water diffusion in the film, as evidenced by electrical measurements under different environments. Experimental data show that parylene passivation layer does not introduce appreciable degradation of device characteristics and allows standard lithographic process, but it is not an effective barrier for water diffusion. The encapsulation of pentacene TFTs with an additional acryl layer does not reduce the device sensitivity to the water, whereas devices encapsulated by a parylene/acryl/aluminum triple layer do not show increase of transfer characteristics hysteresis when measured in air.
2009
Istituto per la Microelettronica e Microsistemi - IMM
Pentacene TFT
Environmental stability
Passivation layer
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/50535
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? 29
social impact