Here we present an interferometric wide field hyperspectral microscope based on a common-path birefringent interferometer with translating wedges, to measure photoluminescence emission from two-dimensional semiconductors. We show diffraction-limited hyperspectral photoluminescence microscopy from two-dimensional materials across millimeter areas, proving that our hyperspectral microscope is a compact, stable and fast tool to characterize the optical properties and the morphology of 2D materials across ultralarge areas.

Hyperspectral microscopy of two-dimensional semiconductors

Valentini, Gianluca;Cerullo, Giulio;Manzoni, Cristian
2022

Abstract

Here we present an interferometric wide field hyperspectral microscope based on a common-path birefringent interferometer with translating wedges, to measure photoluminescence emission from two-dimensional semiconductors. We show diffraction-limited hyperspectral photoluminescence microscopy from two-dimensional materials across millimeter areas, proving that our hyperspectral microscope is a compact, stable and fast tool to characterize the optical properties and the morphology of 2D materials across ultralarge areas.
2022
Istituto di fotonica e nanotecnologie - IFN
Transition metal dichalcogenides, Hyperspectral imaging, Photoluminescence, Strain, Machine vision
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/505581
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