Electro optical absorption in hydrogenated amorphous silicon (alpha-Si:H)-amorphous silicon carbonitride (alpha-SiCxNy) multilayers have been studied in three different planar multistacks waveguides. The waveguides were realized by plasma enhanced chemical vapour deposition (PECVD), a technology compatible with the standard microelectronic processes. Light absorption is induced at lambda = 1.55 mu m through the application of an electric field which induces free carrier accumulation across the multiple insulator/semiconductor device structure. The experimental performances have been compared to those obtained through calculations using combined two-dimensional (2-D) optical and electrical simulations.
Electro-optically induced absorption in alpha-Si:H/alpha-SiCN waveguiding multistacks
Della Corte FG;Summonte C
2010
Abstract
Electro optical absorption in hydrogenated amorphous silicon (alpha-Si:H)-amorphous silicon carbonitride (alpha-SiCxNy) multilayers have been studied in three different planar multistacks waveguides. The waveguides were realized by plasma enhanced chemical vapour deposition (PECVD), a technology compatible with the standard microelectronic processes. Light absorption is induced at lambda = 1.55 mu m through the application of an electric field which induces free carrier accumulation across the multiple insulator/semiconductor device structure. The experimental performances have been compared to those obtained through calculations using combined two-dimensional (2-D) optical and electrical simulations.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
