In this paper, we report results on a field-effect-induced light modulation at lambda = 1.55 mu m in a high-index-contrast waveguide based on a multisilicon-on-insulator platform. The device is realized with the hydrogenated amorphous silicon (alpha-Si:H) technology, and it is suitable for monolithic integration in a CMOS IC. The device exploits the free-carrier optical absorption electrically induced in the semiconductor core waveguide. The amorphous silicon waveguiding layer contains several thin dielectric films of amorphous silicon carbonitride (alpha-SiCN) embedded along its thickness, thus highly enhancing the absorbing action of the modulator held in the ON state.
Electrooptical Modulating Device Based on a CMOS-Compatible alpha-Si:H/alpha-SiCN Multistack Waveguide
Summonte C;
2010
Abstract
In this paper, we report results on a field-effect-induced light modulation at lambda = 1.55 mu m in a high-index-contrast waveguide based on a multisilicon-on-insulator platform. The device is realized with the hydrogenated amorphous silicon (alpha-Si:H) technology, and it is suitable for monolithic integration in a CMOS IC. The device exploits the free-carrier optical absorption electrically induced in the semiconductor core waveguide. The amorphous silicon waveguiding layer contains several thin dielectric films of amorphous silicon carbonitride (alpha-SiCN) embedded along its thickness, thus highly enhancing the absorbing action of the modulator held in the ON state.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
