The family of 2D chalcogenide semiconductors has been growing rapidly. Metal monochalcogenides, for instance, can enable new possibilities in functional electronics and optoelectronics. A Gallium Selenide (GaSe) thin flake is used to fabricate a back gated field effect transistor (FET) with n-type conduction behavior and wide hysteresis at the ambient conditions.

n-Type GaSe Thin Flake for Field Effect Transistor, Photodetector, and Optoelectronic Memory

Pelella A.;Giubileo F.;Romano P.;Patil V.;
2024

Abstract

The family of 2D chalcogenide semiconductors has been growing rapidly. Metal monochalcogenides, for instance, can enable new possibilities in functional electronics and optoelectronics. A Gallium Selenide (GaSe) thin flake is used to fabricate a back gated field effect transistor (FET) with n-type conduction behavior and wide hysteresis at the ambient conditions.
2024
Istituto Superconduttori, materiali innovativi e dispositivi - SPIN - Sede Secondaria Fisciano
2D materials, nanoelectronics
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/510462
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