This paper investigates the effect of nonohmic conduction mechanisms on the output characteristics, and accounts for the excess current through a simple physical model suitable for implementation in a circuit simulator. The model is then used to investigate high-field effects in polysilicon TFTs.
High-field effects in polysilicon thin-film transistors
Pecora A.;Tallarida G.;Fortunato G.
1994
Abstract
This paper investigates the effect of nonohmic conduction mechanisms on the output characteristics, and accounts for the excess current through a simple physical model suitable for implementation in a circuit simulator. The model is then used to investigate high-field effects in polysilicon TFTs.File in questo prodotto:
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