Leakage current in polysilicon TFTs: Experiments and interpretation

Polycrystalline silicon thin-film transistors (poly-TFTs) are getting more and more attractive for Active-Matrix Liquid Crystal Displays (AMLCDs) and, more generally, for large-area electronic products. Anomalously high off-currents, however, are an important limiting factor preventing a wide use of poly-TFTs. The purpose of this work is that of investigating the anomalously large leakage-currents in (poly-TFTs) by numerical simulation, taking into account the effect of energy-distributed traps and field-enhanced generation mechanisms.