The analysis of the roughness of B4C films of different thickness as well as W/B4C multilayer mirrors of different periods is performed basing on AFM and x-ray scattering (XRS) measurements. It is demonstrated that the linear model of a film growth is able to describe the whole set of experimental data including films at initial "island" stage of growth, if suppose the relaxation processes of a film surface to depend on the film thickness. New approach to the inverse problem of x-ray reflectometry consisting in inferring the dielectric constant profile from the reflectivity data is shortly discussed.

X-ray study of surfaces and interfaces

Bukreeva I. N.;
2001

Abstract

The analysis of the roughness of B4C films of different thickness as well as W/B4C multilayer mirrors of different periods is performed basing on AFM and x-ray scattering (XRS) measurements. It is demonstrated that the linear model of a film growth is able to describe the whole set of experimental data including films at initial "island" stage of growth, if suppose the relaxation processes of a film surface to depend on the film thickness. New approach to the inverse problem of x-ray reflectometry consisting in inferring the dielectric constant profile from the reflectivity data is shortly discussed.
2001
Istituto di Nanotecnologia - NANOTEC - Sede Secondaria Roma
Atomic force microscopy
Roughness
X-ray reflectometry
X-ray scattering
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/511661
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