Defects are inherent in transition metal dichalcogenides and significantly affect their chemical and physical properties. In this study, surface defect electrochemical nanopatterning is proposed as a promising method to tune in a controlled manner the electronic and functional properties of defective MoS₂ thin films. Using parallel electrochemical nanolithography, MoS₂ thin films are patterned, creating sulphur vacancy-rich active zones alternated with defect-free regions over a centimetre scale area, with sub-micrometre spatial resolution. The patterned films display tailored optical and electronic properties due to the formation of sulphur vacancy-rich areas. Moreover, the effectiveness of defect nanopatterning in tuning functional properties is demonstrated by studying the electrocatalytic activity for the hydrogen evolution reaction.

Tuning Electronic and Functional Properties in Defected MoS2 Films by Surface Patterning of Sulphur Atomic Vacancies

Gentili, Denis;Calabrese, Gabriele;Lunedei, Eugenio;Borgatti, Francesco;Benekou, Vasiliki;Mezzi, Alessio;Liscio, Fabiola;Candini, Andrea;Ruani, Giampiero;Palermo, Vincenzo;Berretti, Enrico;Lavacchi, Alessandro;Cavallini, Massimiliano
2024

Abstract

Defects are inherent in transition metal dichalcogenides and significantly affect their chemical and physical properties. In this study, surface defect electrochemical nanopatterning is proposed as a promising method to tune in a controlled manner the electronic and functional properties of defective MoS₂ thin films. Using parallel electrochemical nanolithography, MoS₂ thin films are patterned, creating sulphur vacancy-rich active zones alternated with defect-free regions over a centimetre scale area, with sub-micrometre spatial resolution. The patterned films display tailored optical and electronic properties due to the formation of sulphur vacancy-rich areas. Moreover, the effectiveness of defect nanopatterning in tuning functional properties is demonstrated by studying the electrocatalytic activity for the hydrogen evolution reaction.
2024
Istituto per lo Studio dei Materiali Nanostrutturati - ISMN - Sede Secondaroa Bologna
Istituto per la Microelettronica e Microsistemi - IMM - Sede Secondaria Bologna
Istituto di Chimica dei Composti OrganoMetallici - ICCOM -
Istituto per la Sintesi Organica e la Fotoreattivita' - ISOF
defect engineering
hydrogen evolution reaction
molybdenum disulfide
nanolithography
patterning
sulphur vacancy
tuning electronic properties
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/511764
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