Polycrystalline AlN films with the c-axis oriented normal to the substrate surface, were deposited by RF reactive diode magnetron sputtering on fused quartz, silicon and sapphire. The films were characterized as to their morphology, optic and acoustic characteristics. The phase velocity dispersion curves vs. normalized film thickness were evaluated theoretically together with the electromechanical coupling coefficient for the four different interdigital transducers geometries. The theoretical results were compared with the experimental values. Results showed AlN film suitable for applications to SAW devices

PIEZOELECTRIC AIN FILM FOR SAW DEVICES APPLICATIONS

CALIENDO, C
Primo
Membro del Collaboration Group
;
VERARDI, P
Penultimo
Membro del Collaboration Group
;
VERONA, E
Ultimo
Membro del Collaboration Group
1993

Abstract

Polycrystalline AlN films with the c-axis oriented normal to the substrate surface, were deposited by RF reactive diode magnetron sputtering on fused quartz, silicon and sapphire. The films were characterized as to their morphology, optic and acoustic characteristics. The phase velocity dispersion curves vs. normalized film thickness were evaluated theoretically together with the electromechanical coupling coefficient for the four different interdigital transducers geometries. The theoretical results were compared with the experimental values. Results showed AlN film suitable for applications to SAW devices
1993
Istituto di Acustica e Sensoristica - IDASC - Sede Roma Tor Vergata (attivo dal 18/11/1923 al 31/12/2021)
AlN, piezoelectricity, SAW
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/512508
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