Antenna-coupled field effect transistors have been developed as plasma-wave THz detectors in both InAs nanowire and graphene channel material. Room temperature operation has been achieved up to frequencies of 1.5 THz, with noise equivalent powers as low as a few 10^(-11) W/Hz^(1/2), and high-speed response.
Nanowire and graphene architectures for Room Temperature THz detection
Vitiello, M. S.;Vicarelli, L.;Viti, L.;Ercolani, D.;Polini, M.;Beltram, F.;Sorba, L.;Pellegrini, V.;Tredicucci, A.
2012
Abstract
Antenna-coupled field effect transistors have been developed as plasma-wave THz detectors in both InAs nanowire and graphene channel material. Room temperature operation has been achieved up to frequencies of 1.5 THz, with noise equivalent powers as low as a few 10^(-11) W/Hz^(1/2), and high-speed response.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
