Antenna-coupled field effect transistors have been developed as plasma-wave THz detectors in both InAs nanowire and graphene channel material. Room temperature operation has been achieved up to frequencies of 1.5 THz, with noise equivalent powers as low as a few 10^(-11) W/Hz^(1/2), and high-speed response.
Nanowire and graphene architectures for Room Temperature THz detection
Vitiello, M. S.;Vicarelli, L.;Viti, L.;Ercolani, D.;Polini, M.;Beltram, F.;Sorba, L.;Pellegrini, V.;
2012
Abstract
Antenna-coupled field effect transistors have been developed as plasma-wave THz detectors in both InAs nanowire and graphene channel material. Room temperature operation has been achieved up to frequencies of 1.5 THz, with noise equivalent powers as low as a few 10^(-11) W/Hz^(1/2), and high-speed response.File in questo prodotto:
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vitiello2012-VR-nW and graphene architectures for RT THz detection-IRMMW-THz.2012.6380288.pdf
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vitiello2012-AV-nW and graphene architectures for RT THz detection-IRMMW-THz.2012.6380288.pdf
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