In this paper, two procedures for the growth of both binary and ternary single crystals of bismuth chalcogenides by optical floating zone technique are described. Detailed characterization has been carried out on a series of samples, i.e. Bi2SexTe3-x, with x = 0 and 0.9, and Bi2-xSbxSe3, with x = 0 and 0.15, to isolate high quality single crystals, essential for an accurate study of the physical properties of the materials. Systematic compositional and structural analysis on the samples grown by the two different procedures have been compared to infer the optimal growth parameters to obtain the largest possible single crystals. The c-axis lattice parameter of Bi1.85Sb0.15Se3 is reported here for the first time.
Bismuth chalcogenide topological insulators crystals grown by the optical floating zone technique
Guarino A.;Arumugam R.;Fittipaldi R.;Lettieri M.;Vecchione A.
2024
Abstract
In this paper, two procedures for the growth of both binary and ternary single crystals of bismuth chalcogenides by optical floating zone technique are described. Detailed characterization has been carried out on a series of samples, i.e. Bi2SexTe3-x, with x = 0 and 0.9, and Bi2-xSbxSe3, with x = 0 and 0.15, to isolate high quality single crystals, essential for an accurate study of the physical properties of the materials. Systematic compositional and structural analysis on the samples grown by the two different procedures have been compared to infer the optimal growth parameters to obtain the largest possible single crystals. The c-axis lattice parameter of Bi1.85Sb0.15Se3 is reported here for the first time.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
