Electric Field-Controlled Ambipolar Resistance Behavior in Vanadium Dioxide Nano-Bridge Transistors

We have demonstrated the potential of electric field control in manipulating lattice and charge degrees of freedom in correlated electron materials, leading to the development of electronic devices with unconventional functionalities. Specifically, we achieved ambipolar control over the resistance of a VO2 nanobridge using a bottom gate. The resistance behavior varied based on the crystal orientation, indicating the influence of 3dx2-y2 orbitals. These findings offer possibilities for Schmitt trigger device development and studying conductivity through strain. The research highlights the ability of lattice-charge coupling to induce nonlinear electronic behavior, independent of assembled circuits.