: The ability to form freestanding oxide membranes of nanoscale thickness is of great interest for enabling material functionality and for integrating oxides in flexible electronic and photonic technologies. Recently, a route has been demonstrated for forming conducting heterostructure membranes of LaAlO3 and SrTiO3, the canonical system for oxide electronics. In this route, the epitaxial growth of LaAlO3 on SrTiO3 resulted in a strained state that relaxed by producing freestanding membranes with random sizes and locations. Here, we extend the method to enable self-formed LaAlO3/SrTiO3 micromembranes with control over membrane position, their lateral sizes from 2 to 20 μm, and with controlled transfer to other substrates of choice. This method opens up the possibility to study and use the two-dimensional electron gas in LaAlO3/SrTiO3 membranes for advanced device concepts.

Size-Controlled Spalling of LaAlO3/SrTiO3 Micromembranes

Sambri, Alessia;Gennaro, Emiliano Di;Guarino, Anita;Granozio, Fabio Miletto;
2021

Abstract

: The ability to form freestanding oxide membranes of nanoscale thickness is of great interest for enabling material functionality and for integrating oxides in flexible electronic and photonic technologies. Recently, a route has been demonstrated for forming conducting heterostructure membranes of LaAlO3 and SrTiO3, the canonical system for oxide electronics. In this route, the epitaxial growth of LaAlO3 on SrTiO3 resulted in a strained state that relaxed by producing freestanding membranes with random sizes and locations. Here, we extend the method to enable self-formed LaAlO3/SrTiO3 micromembranes with control over membrane position, their lateral sizes from 2 to 20 μm, and with controlled transfer to other substrates of choice. This method opens up the possibility to study and use the two-dimensional electron gas in LaAlO3/SrTiO3 membranes for advanced device concepts.
2021
Istituto Superconduttori, materiali innovativi e dispositivi - SPIN - Sede Secondaria Napoli
LaAlO3/SrTiO3
flexible electronics
freestanding oxide membranes
micro manipulation
thin-film spalling
two-dimensional electron gas
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/513479
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