In this article, we investigate the optically induced degradation of Cu(InGa)Se 2 (CIGS) solar cells subjected to monochromatic laser irradiation. The devices under test are bifacial CIGS solar cells, fabricated on fluorine-doped SnO 2 glass substrates. The electrical properties under dark and illumination conditions were characterized before laser exposure. The analysis of the current–voltage characteristics indicated that defect-assisted carrier transport dominates within the space charge region. Continuous laser exposure at constant optical power caused a decrease in open-circuit voltage ( V oc ). The study of the dark current–voltage curves highlights a change in the saturation current ( IS ) and ideality factor ( n ), whose increment follows a square-root dependence on time. This behavior is attributed to diffusion of Na ions toward the junction. Conversely, the V oc decay (which is correlated with the turn- on voltage decrease in dark I–V curve) is ascribed to a light-induced defect generation that enhances leakage current at the CdS/CIGS interface.
Effect of High Monochromatic Radiation on the Electrical Performance of CIGS Solar Cell
Stefano Rampino;Matteo Bronzoni;Massimo Mazzer;
2024
Abstract
In this article, we investigate the optically induced degradation of Cu(InGa)Se 2 (CIGS) solar cells subjected to monochromatic laser irradiation. The devices under test are bifacial CIGS solar cells, fabricated on fluorine-doped SnO 2 glass substrates. The electrical properties under dark and illumination conditions were characterized before laser exposure. The analysis of the current–voltage characteristics indicated that defect-assisted carrier transport dominates within the space charge region. Continuous laser exposure at constant optical power caused a decrease in open-circuit voltage ( V oc ). The study of the dark current–voltage curves highlights a change in the saturation current ( IS ) and ideality factor ( n ), whose increment follows a square-root dependence on time. This behavior is attributed to diffusion of Na ions toward the junction. Conversely, the V oc decay (which is correlated with the turn- on voltage decrease in dark I–V curve) is ascribed to a light-induced defect generation that enhances leakage current at the CdS/CIGS interface.File | Dimensione | Formato | |
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