This paper is devoted to the identification of doping profiles in the stationary drift-diffusion equations modelling carrier and charge transport in semiconductor devices. We develop a framework for these inverse doping problems with different possible measurements and discuss mathematical properties of the inverse problem, such as the identifiability and the type of ill-posedness.
Identification of doping profiles in semiconductor devices
Pietra P
2001
Abstract
This paper is devoted to the identification of doping profiles in the stationary drift-diffusion equations modelling carrier and charge transport in semiconductor devices. We develop a framework for these inverse doping problems with different possible measurements and discuss mathematical properties of the inverse problem, such as the identifiability and the type of ill-posedness.File in questo prodotto:
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