The study of MoS2/metal interfaces is crucial for engineering efficient semiconductor-metal contacts in 2D MoS2-based devices. Here we investigate a MoS2/Ag heterostructure fabricated by growing a single MoS2 layer on Ag(111) by pulsed laser deposition under ultrahigh vacuum (UHV) conditions. The surface structure is observed in situ by scanning tunneling microscopy, revealing the hexagonal moiré pattern characteristic of the clean MoS2/Ag(111) interface. Ex situ Raman spectroscopy reveals an anomalous behavior of vibrational modes, induced by the strong MoS2-Ag interaction. After few-hours exposure to ambient conditions the Raman response significantly changes and the formation of molybdenum oxysulfides is revealed by X-ray photoelectron spectroscopy. These effects are due to the interplay with water vapor and can be reversed by a moderate UHV annealing. A polymeric (PMMA) capping is demonstrated to hinder water-induced modifications, preserving the original interface quality for months.

Hydrophilic Character of Single-Layer MoS2Grown on Ag(111)

Grazianetti C.
;
Martella C.;Molle A.;
2021

Abstract

The study of MoS2/metal interfaces is crucial for engineering efficient semiconductor-metal contacts in 2D MoS2-based devices. Here we investigate a MoS2/Ag heterostructure fabricated by growing a single MoS2 layer on Ag(111) by pulsed laser deposition under ultrahigh vacuum (UHV) conditions. The surface structure is observed in situ by scanning tunneling microscopy, revealing the hexagonal moiré pattern characteristic of the clean MoS2/Ag(111) interface. Ex situ Raman spectroscopy reveals an anomalous behavior of vibrational modes, induced by the strong MoS2-Ag interaction. After few-hours exposure to ambient conditions the Raman response significantly changes and the formation of molybdenum oxysulfides is revealed by X-ray photoelectron spectroscopy. These effects are due to the interplay with water vapor and can be reversed by a moderate UHV annealing. A polymeric (PMMA) capping is demonstrated to hinder water-induced modifications, preserving the original interface quality for months.
2021
Istituto per la Microelettronica e Microsistemi - IMM - Sede Secondaria Agrate Brianza
MoS2
Ag(111)
interfaces
Raman spectroscopy
pulsed laser deposition
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/515425
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