We report on the formation of gas bubbles during the release of MEMS devices using buffered oxide etch. Several approaches to mitigate the problem are proposed and tested together with a qualitative study of the phenomenon. The chemical reaction behind such phenomenon and the influence of defects and topography is discussed. Finally, a comparison with the HF-vapor release technique is shown.

Vapor etching to avoid micro-masking by gas-bubbles in wet release of MEMS

Plaza, Alejandro
Writing – Original Draft Preparation
;
Maspero, Federico
Writing – Review & Editing
;
Bertacco, Riccardo
Writing – Review & Editing
2023

Abstract

We report on the formation of gas bubbles during the release of MEMS devices using buffered oxide etch. Several approaches to mitigate the problem are proposed and tested together with a qualitative study of the phenomenon. The chemical reaction behind such phenomenon and the influence of defects and topography is discussed. Finally, a comparison with the HF-vapor release technique is shown.
2023
Istituto Superconduttori, materiali innovativi e dispositivi - SPIN
bubbles
MEMS
micro-masking
wet etching
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/516560
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